Capacity: | 480 GB |
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Variants: | 480 GB 960 GB |
Overprovisioning: | 65.0 GB / 14.5 % |
Production: | End-of-life |
Released: | Sep 24th, 2018 |
Price at Launch: | 999 USD |
Part Number: | MZ-PZA480BW |
Market: | Enterprise |
Form Factor: | Add-In Card |
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Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.2 |
Power Draw: |
5.5 W (Idle) 8.5 W (Avg) 9.0 W (Max) |
Manufacturer: | Samsung |
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Name: | Phoenix (S4LR020) |
Architecture: | ARM 32-bit Cortex-R7 |
Core Count: | 5-Core |
Foundry: | Samsung FinFET |
Process: | 14 nm |
Flash Channels: | 8 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
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Name: | Z-NAND V1 |
Part Number: | K9QHGB8J0M-CCB0 |
Type: | SLC |
Technology: | 48-layer |
Speed: | 667 MT/s |
Capacity: | 8 chips @ 512 Gbit |
Topology: | Charge Trap |
Die Size: | 101 mm² (0.6 Gbit/mm²) |
Dies per Chip: | 8 dies @ 64 Gbit |
Planes per Die: | 8 |
Read Time (tR): | 3 µs |
Program Time (tProg): | 100 µs |
Die Write Speed: | 160 MB/s |
Page Size: | 2 KB |
Type: | LPDDR4 |
---|---|
Name: | Samsung |
Capacity: |
1536 MB
(1x 1536 MB) |
Sequential Read: | 3,400 MB/s |
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Sequential Write: | 3,000 MB/s |
Random Read: | 750,000 IOPS |
Random Write: | 75,000 IOPS |
Endurance: | 7440 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 8.5 |
Write Cache: | N/A |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | Yes |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:Comes with 3 Capacitors for Power loss Protection NAND Die:To further minimize read latency, I/O circuit support a DDR |