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Samsung 990 QVO 4 TB

4 TB
Capacity
Samsung PiccoloQ
Controller
QLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

This SSD is not released yet.

Data on this page may change in the future.

The Samsung 990 QVO will be a solid-state drive in the M.2 2280 form factor, that is expected to launch in 2024. It is only available in the 4 TB capacity listed on this page. With the rest of the system, the Samsung 990 QVO interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PiccoloQ (S4LY028) from Samsung, a DRAM cache is not available. Samsung has installed 176-layer QLC NAND flash on the 990 QVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. Performance characteristics of the drive are unknown.
We have no information regarding the price at release. The warranty length is set to five years, which is an excellent warranty period. The TBW rating for the Samsung 990 QVO 4 TB is unknown, too. New information will be added to this page as soon as it becomes available.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Overprovisioning: 370.7 GB / 10.0 %
Production: Unreleased
Released: 2024
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown
Interface:PCIe 5.0 x2

Controller

Manufacturer: Samsung
Name: PiccoloQ (S4LY028)
Architecture: ARM 32-bit Cortex-R8
Core Count: 6-Core
Foundry: Samsung FinFET
Process: 5 nm
Flash Channels: 4 @ 2,400 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V7
Type: QLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 2 chips @ 16 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 67 mm²
(15.3 Gbit/mm²)
Dies per Chip: 16 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 1
Word Lines: 191 per NAND String
92.1% Vertical Efficiency
Read Time (tR): 85 µs
Program Time (tProg): 1600 µs
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: Unknown
Sequential Write: Unknown
Random Read: Unknown
Random Write: Unknown
Endurance: Unknown
Warranty: 5 Years
MTBF: 1.5 Million Hours
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

Upper Deck: 101 Gates
Lower Deck: 90 Gates
Jun 1st, 2024 15:41 EDT change timezone

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