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Samsung PM1743 7.5 TB

7.5 TB
Capacity
Samsung ELAN
Controller
TLC
Flash
PCIe 5.0 x4
Interface
U.2
Form Factor
Front
NAND Die
NAND Die
The Samsung PM1743 is a solid-state drive in the U.2 form factor, launched in October 2022. It is available in capacities ranging from 1.9 TB to 15 TB. This page reports specifications for the 7.5 TB variant. With the rest of the system, the Samsung PM1743 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the ELAN (S4LV006) from Samsung, a DRAM cache chip is available. Samsung has installed 128-layer TLC NAND flash on the PM1743, the flash chips are made by Samsung. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The PM1743 is rated for sequential read speeds of up to 14,000 MB/s and 6,000 MB/s write; random IO reaches 2500K IOPS for read and 300K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 14016 TBW, a high value.

Solid-State-Drive

Capacity: 7.5 TB (7680 GB)
Variants: 1.9 TB 3.8 TB 7.5 TB 15 TB
Overprovisioning: 1039.4 GB / 14.5 %
Production: Active
Released: Oct 2022
Part Number: MZWLO7T6HBLA
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 5.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown (Idle)
21.1 W (Avg)
23.0 W (Max)

Controller

Manufacturer: Samsung
Name: ELAN (S4LV006)
Architecture: ARM 32-bit Cortex-M0
Foundry: Samsung FinFET
Process: 8 nm
Flash Channels: 16 @ 1,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: Unknown
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: DDR4
Capacity: Unknown

Performance

Sequential Read: 14,000 MB/s
Sequential Write: 6,000 MB/s
Random Read: 2,500,000 IOPS
Random Write: 300,000 IOPS
Endurance: 14016 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 1.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning
Jun 1st, 2024 15:16 EDT change timezone

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