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SanDisk X400 1 TB

1 TB
Capacity
88SS1074
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
PCB Front
Tom's Hardware
PCB Front
PCB Back
Tom's Hardware
PCB Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The SanDisk X400 was a solid-state drive in the 2.5" form factor, launched on January 5th, 2016, that is no longer in production. It was available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the SanDisk X400 interfaces using a SATA 6 Gbps connection. The SSD controller is the 88SS1074 Dean from Marvell, a DRAM cache chip is available. SanDisk has installed 64-layer TLC NAND flash on the X400, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly, once it is full, writes complete at 275 MB/s. The X400 is rated for sequential read speeds of up to 545 MB/s and 520 MB/s write; random IOPS reach up to 95K for reads and 75K for writes.
At its launch, the SSD was priced at 240 USD. The warranty length is set to five years, which is an excellent warranty period. SanDisk guarantees an endurance rating of 320 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: End-of-life
Released: Jan 5th, 2016
Price at Launch: 240 USD
Part Number: SD8SB8U-1T00
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.07 W (Idle)
2.9 W (Avg)
4.4 W (Max)

Controller

Manufacturer: Marvell
Name: 88SS1074 Dean
Architecture: ARM 32-bit ARM9/ARMv5
Core Count: Dual-Core
Frequency: 400 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3
Rebranded: 05478 128G (Rebranded by SanDisk)
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 8 chips @ 1 Tbit
ONFI: 3.2
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 1478 Blocks

DRAM Cache

Type: DDR3-1866
Name: Micron MT41K512M8RG-107:N (D9RVX)
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 545 MB/s
Sequential Write: 520 MB/s
Random Read: 95,000 IOPS
Random Write: 75,000 IOPS
Endurance: 320 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes
Speed when Cache Exhausted: approx. 275 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)

Jun 1st, 2024 17:55 EDT change timezone

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