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Seagate BarraCuda 510 1 TB

1 TB
Capacity
Phison E12
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
Back
PCB Front
PCB Front
DRAM
ServeTheHome
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Seagate BarraCuda 510 is a solid-state drive in the M.2 2280 form factor, launched in 2019. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Seagate BarraCuda 510 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12-27 from Phison, a DRAM cache chip is available. Seagate has installed 96-layer TLC NAND flash on the BarraCuda 510, the flash chips are made by Kioxia. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The BarraCuda 510 is rated for sequential read speeds of up to 3,400 MB/s and 3,000 MB/s write; random IOPS reach up to 600K for reads and 600K for writes.
The SSD's price at launch is unknown. Seagate guarantees an endurance rating of 640 TBW, a very low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2019
Part Number: ZP1000CM30001
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.02 W (Idle)
5.3 W (Avg)
Unknown (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12-27
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Kioxia
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2400
Name: SK Hynix H5AN4G6NBJR-UHC
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 3,000 MB/s
Random Read: 600,000 IOPS
Random Write: 600,000 IOPS
Endurance: 640 TBW
Warranty: Unknown
MTBF: 1.8 Million Hours
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Opal
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

The controller could have changed from E12 to E12S and some revisions are Kioxia 64L TLC (BiCS3) and not 96L TLC BiCS4.

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 17:55 EDT change timezone

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