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SK Hynix Gold P31 500 GB

500 GB
Capacity
SK Hynix Cepheus
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
SSD Controller
Controller
The SK Hynix Gold P31 is a solid-state drive in the M.2 2280 form factor, launched on August 17th, 2021. It is available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the SK Hynix Gold P31 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Cepheus from SK Hynix, a DRAM cache chip is available. SK Hynix has installed 128-layer TLC NAND flash on the Gold P31, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 48 GB, once it is full, writes complete at 950 MB/s. The Gold P31 is rated for sequential read speeds of up to 3,500 MB/s and 3,100 MB/s write; random IOPS reach up to 570K for reads and 600K for writes.
At its launch, the SSD was priced at 74 USD. The warranty length is set to five years, which is an excellent warranty period. SK Hynix guarantees an endurance rating of 500 TBW, a good value.

Solid-State-Drive

Capacity: 500 GB
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 46.3 GB / 10.0 %
Production: Active
Released: Aug 17th, 2021
Price at Launch: 74 USD
Part Number: SHGP31-500GM-2
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.35 W (Idle)
2.1 W (Avg)
3.0 W (Max)

Controller

Manufacturer: SK Hynix
Name: Cepheus
Architecture: ARM 32-bit Cortex-R
Core Count: Dual-Core
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 4 @ 1,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: 4D V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 63 mm²
(8.1 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 147 per NAND String
87.1% Vertical Efficiency
Read Time (tR): 73 µs
Program Time (tProg): 695 µs
Die Write Speed: 92 MB/s
Page Size: 16 KB

DRAM Cache

Type: LPDDR4-2133
Capacity: 512 MB
(1x 512 MB)

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 3,100 MB/s
Random Read: 570,000 IOPS
Random Write: 600,000 IOPS
Endurance: 500 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.5
SLC Write Cache: approx. 48 GB
(44 GB Dynamic
+ 4 GB Static)
Speed when Cache Exhausted: approx. 950 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Multi-core ARM-based controller

NAND Die:

Could be a tripple deck design.

Jun 1st, 2024 17:16 EDT change timezone

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