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Transcend MTE250S 1 TB

1 TB
Capacity
SM2264F
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
The Transcend MTE250S is a solid-state drive in the M.2 2280 form factor, launched on October 26th, 2022. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Transcend MTE250S interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the SM2264F from Silicon Motion, a DRAM cache chip is available. Transcend has installed 112-layer TLC NAND flash on the MTE250S, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 200 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The MTE250S is rated for sequential read speeds of up to 7,200 MB/s and 6,200 MB/s write; random IOPS reach up to 530K for reads and 420K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Transcend guarantees an endurance rating of 780 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Oct 26th, 2022
Part Number: TS1TMTE250S
Market: Consumer

Physical

Form Factor: M.2 2280
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2264F
Architecture: ARM 32-bit Cortex-R8
Core Count: Quad-Core
Frequency: 700 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: Unknown
Toggle: 4.0
Topology: Charge Trap
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type: DDR4
Capacity: 1024 MB

Performance

Sequential Read: 7,200 MB/s
Sequential Write: 6,200 MB/s
Random Read: 530,000 IOPS
Random Write: 420,000 IOPS
Endurance: 780 TBW
Warranty: 5 Years
MTBF: 3.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 200 GB
(dynamic only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

Clock confirmed by SMI

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.
Jun 1st, 2024 16:39 EDT change timezone

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