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Western Digital SN570 1 TB

1 TB
Capacity
WD 20-82-10048
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Front
PCB Front
PCB Back
PCB Back
Flash
Flash
SSD Controller
Controller
The Western Digital SN570 is a solid-state drive in the M.2 2280 form factor, launched on December 13th, 2021. It is available in capacities ranging from 250 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Western Digital SN570 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-10048-A1 Polaris MP16 from WD, a DRAM cache is not available. Western Digital has installed 112-layer TLC NAND flash on the SN570, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 13 GB, once it is full, writes complete at 615 MB/s. The SN570 is rated for sequential read speeds of up to 3,500 MB/s and 3,000 MB/s write; random IOPS reach up to 460K for reads and 450K for writes.
At its launch, the SSD was priced at 110 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 600 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Dec 13th, 2021
Price at Launch: 110 USD
Part Number: WDS100T3B0C
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.4
Power Draw: 0.87 W (Idle)
3.1 W (Avg)
3.8 W (Max)

Controller

Manufacturer: WD
Name: 20-82-10048-A1 Polaris MP16
Architecture: ARM 32-bit Cortex-R
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Rebranded: 014130 1T00 (Rebranded by Sandisk)
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 3,000 MB/s
Random Read: 460,000 IOPS
Random Write: 450,000 IOPS
Endurance: 600 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 13 GB
(static only)
Speed when Cache Exhausted: approx. 615 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

This drive features a small Static pSLC Cache in order to have a better performance, endurance and reliability.

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.

Jun 1st, 2024 16:03 EDT change timezone

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