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Western Digital SN750 250 GB

250 GB
Capacity
WD 20-82-007011
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN750 is a solid-state drive in the M.2 2280 form factor, launched on January 18th, 2019. It is available in capacities ranging from 250 GB to 4 TB. This page reports specifications for the 250 GB variant. With the rest of the system, the Western Digital SN750 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-007011 Triton MP28 from WD, a DRAM cache chip is available. Western Digital has installed 64-layer TLC NAND flash on the SN750, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The SN750 is rated for sequential read speeds of up to 3,100 MB/s and 1,600 MB/s write; random IO reaches 220K IOPS for read and 180K for writes.
At its launch, the SSD was priced at 80 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 250 GB
Variants: 250 GB 500 GB 1 TB 2 TB 4 TB
Overprovisioning: 23.2 GB / 10.0 %
Production: Active
Released: Jan 18th, 2019
Price at Launch: 80 USD
Part Number: WDS250G3X0C-00SJG
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: WD
Name: 20-82-007011 Triton MP28
Architecture: ARM 32-bit Cortex-R
Core Count: Triple-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS3 (256Gb)
Rebranded: (Rebranded by Sandisk)
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 2 chips @ 1 Tbit
ONFI: 3.2
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Dies per Chip: 4 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 1478 Blocks

DRAM Cache

Type: DDR4-2400 CL17
Name: SK Hynix H5AN8G6NAFR-UHC
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,100 MB/s
Sequential Write: 1,600 MB/s
Random Read: 220,000 IOPS
Random Write: 180,000 IOPS
Endurance: 200 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)

Jun 1st, 2024 16:39 EDT change timezone

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