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Wicgtyp NV940 512 GB

512 GB
Capacity
SM2269XT
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Package
MySKU
Package
Back
MySKU
Back
PCB Front
MySKU
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The Wicgtyp NV940 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Wicgtyp NV940 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the SM2269XT from Silicon Motion, a DRAM cache is not available. Wicgtyp has installed 176-layer TLC NAND flash on the NV940, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 85 GB, once it is full, writes complete at 800 MB/s. Copying data out of the SLC cache (folding) completes at 420 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The NV940 is rated for sequential read speeds of up to 5,190 MB/s and 2,610 MB/s write.
At its launch, the SSD was priced at 46 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. The TBW rating for the Wicgtyp NV940 512 GB is unknown.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2022
Price at Launch: 46 USD
Part Number: NV940-512
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown (Idle)
Unknown (Avg)
2.9 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2269XT
Architecture: ARM 32-bit Cortex-R8
Core Count: Dual-Core
Frequency: 650 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 8
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Part Number: NX962
Rebranded: MT29F2T08ELLEEG7-QBES:E
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 2 chips @ 2 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 5,190 MB/s
Sequential Write: 2,610 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: Unknown
Warranty: 3 Years
SLC Write Cache: approx. 85 GB
(dynamic only)
Speed when Cache Exhausted: approx. 800 MB/s
Cache Folding Speed: 420 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

The difference between this and the non-XT revision is that this revision doesn't support DRAM, in fact it supports HMB (Host Memory Buffer). Also, this revision has a different package (247-balls FCCSP).

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Jun 1st, 2024 15:02 EDT change timezone

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