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XPG Gammix S10 256 GB

256 GB
Capacity
SM2260
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Back
HD Tecnoloigia
PCB Back
SSD Controller
Controller
NAND Die
NAND Die
The XPG Gammix S10 is a solid-state drive in the M.2 2280 form factor, launched in 2018. It is available in capacities ranging from 128 GB to 1 TB. This page reports specifications for the 256 GB variant. With the rest of the system, the XPG Gammix S10 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2260 from Silicon Motion, a DRAM cache chip is available. XPG has installed 32-layer TLC NAND flash on the Gammix S10, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The Gammix S10 is rated for sequential read speeds of up to 1,270 MB/s and 820 MB/s write; random IO reaches 70K IOPS for read and 130K for writes.
At its launch, the SSD was priced at 98 USD. The warranty length is set to five years, which is an excellent warranty period. XPG guarantees an endurance rating of 160 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 256 GB
Variants: 128 GB 256 GB 512 GB 1 TB
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: 2018
Price at Launch: 98 USD
Part Number: ASX7000NPC-256GT-C
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.2
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2260
Architecture: ARM 32-bit Cortex-R
Core Count: Dual-Core
Foundry: TSMC
Process: 40 nm
Flash Channels: 8
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B0KB FortisFlash
Rebranded: MT29F1T208ECCBBJ4-37:B
Type: TLC
Technology: 32-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 2 chips @ 1 Tbit
ONFI: 4.0
Topology: Floating Gate
Die Size: 168 mm²
(2.3 Gbit/mm²)
Dies per Chip: 3 dies @ 384 Gbit
Planes per Die: 4
Decks per Die: 2
Read Time (tR): 92 µs
Program Time (tProg): 2100 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 695 MB/s
Die Write Speed: 30 MB/s
Endurance:
(up to)
1500 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 548 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: NANYA NT5CC64M16GP-DI
Capacity: 256 MB
(2x 128 MB)
Organization: 1Gx16

Performance

Sequential Read: 1,270 MB/s
Sequential Write: 820 MB/s
Random Read: 70,000 IOPS
Random Write: 130,000 IOPS
Endurance: 160 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

This drive has a Static pSLC Cache
NAND Bus speed might be between 533 MT/s ~ 667 MT/s.

NAND Die:

tPROG with overhead: 1630 µs (Avg - 19.6 MB/s)

Jun 1st, 2024 19:22 EDT change timezone

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