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Zhitai PC005 Active 1 TB

1 TB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
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Back
Package
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Package
PCB Front
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PCB Front
DRAM
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DRAM
Flash
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Flash
SSD Controller
Controller
NAND Die
NAND Die
The Zhitai PC005 Active is a solid-state drive in the M.2 2280 form factor, launched in September 2021. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the Zhitai PC005 Active interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. Zhitai has installed 64-layer TLC NAND flash on the PC005 Active, the flash chips are made by YMTC. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 11 GB, once it is full, writes complete at 750 MB/s. The PC005 Active is rated for sequential read speeds of up to 3,500 MB/s and 2,900 MB/s write; random IOPS reach up to 340K for reads and 360K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Zhitai guarantees an endurance rating of 640 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Sep 2021
Part Number: PC005 Active-1TB
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: YMTC
Name: Xtacking 1.0
Part Number: YMN08TE1B3PC3B
Type: TLC
Technology: 64-layer
Speed: 800 MT/s
Capacity: 2 chips @ 4 Tbit
ONFI: 4.0
Topology: Charge Trap
Process: 40 nm
Die Size: 58 mm²
(4.4 Gbit/mm²)
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 73 per NAND String
87.7% Vertical Efficiency
Read Time (tR): 74 µs
Program Time (tProg): 760 µs
Block Erase Time (tBERS): 9.0 ms
Die Read Speed: 432 MB/s
Die Write Speed: 42 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1006 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: NANYA NT5AD512M16A4-HR
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 2,900 MB/s
Random Read: 340,000 IOPS
Random Write: 360,000 IOPS
Endurance: 640 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 11 GB
(dynamic only)
Speed when Cache Exhausted: approx. 750 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

Array Eficiency of over 90%
The 64-Word Layers NAND Die from YMTC actuall has 73-Gate Layers, being 64 for storage, 5 DWL (Dummy Word Layers) alongside 4 select Gates (1 SG and 3 Drain SGs)

PS: Bit-line pitch is 40nm
NAND Die Endurance: From 1500 to 3000 P.E.C.
NAND Flash Bus: Up to 800 MT/s
Page Read in SLC Mode: 34µs
Page Write in SLC Mode: 34µs
Block Erase in SLC Mode: 3.3ms

May 18th, 2024 04:21 EDT change timezone

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