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Zircon L1 Series 256 GB (Micron N48R)

256 GB
Capacity
MAS1102B-B1C
Controller
QLC
Flash
PCIe 3.0 x2
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Zircon L1 Series is a solid-state drive in the M.2 2280 form factor, launched in February 2023. It is available in capacities ranging from 256 GB to 512 GB. This page reports specifications for the 256 GB variant. With the rest of the system, the Zircon L1 Series interfaces using a PCI-Express 3.0 x2 connection. The SSD controller is the MAS1102B-B1C from MaxioTech, a DRAM cache is not available. Zircon has installed 176-layer QLC NAND flash on the L1 Series, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The L1 Series is rated for sequential read speeds of up to 580 MB/s and 540 MB/s write; random IO reaches 58K IOPS for read and 62K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Zircon guarantees an endurance rating of 174 TBW, a good value.

Solid-State-Drive

Capacity: 256 GB
Variants: 256 GB 512 GB
Hardware Versions:
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: Feb 2023
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x2
Protocol: AHCI
Power Draw: Unknown (Idle)
Unknown (Avg)
1.5 W (Max)

Controller

Manufacturer: MaxioTech
Name: MAS1102B-B1C
Architecture: ARM 32-bit
Flash Channels: 2 @ 667 MT/s
Chip Enables: 8

NAND Flash

Manufacturer: Micron
Name: N48R MediaFlash
Part Number: MT29F1T08GBLCE
Type: QLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 2 chips @ 1 Tbit
ONFI: 4.2
Topology: Replacement Gate
Die Size: 69 mm²
(14.8 Gbit/mm²)
Dies per Chip: 1 die @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 109 µs
Program Time (tProg): 2339 µs
Block Erase Time (tBERS): 7.5 ms
Die Read Speed: 587 MB/s
Die Write Speed: 27 MB/s
Endurance:
(up to)
900 P/E Cycles
(60000 in SLC Mode)
Page Size: 16 KB
Block Size: 2816 Pages
Plane Size: 817 Blocks

DRAM Cache

Type: None

Performance

Sequential Read: 580 MB/s
Sequential Write: 540 MB/s
Random Read: 58,000 IOPS
Random Write: 62,500 IOPS
Endurance: 174 TBW
Warranty: 3 Years
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 0.6
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Read Time (tR): 109 µs ~ 121 µs

Jun 1st, 2024 18:12 EDT change timezone

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