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Goodram PX500 512 GB (Phison E13 + Kioxia BiCS5)

512 GB
Capacity
Phison E13
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
The Goodram PX500 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is only available in the 512 GB capacity listed on this page. With the rest of the system, the Goodram PX500 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5013-E13-31 from Phison, a DRAM cache is not available. Goodram has installed 112-layer TLC NAND flash on the PX500, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The PX500 is rated for sequential read speeds of up to 2,000 MB/s and 1,600 MB/s write; random IOPS reach up to 173K for reads and 140K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Goodram guarantees an endurance rating of 330 TBW, a good value.

Solid-State-Drive

Capacity: 512 GB
Hardware Versions:
Overprovisioning: 35.2 GB / 7.4 %
Production: Unknown
Released: 2022
Part Number: SSDPR-PX500-512-80
Market: Consumer

Physical

Form Factor: M.2 2280
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5013-E13-31
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 667 MT/s
Chip Enables: 8
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 1 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 2 dies @ 512 Gbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,000 MB/s
Sequential Write: 1,600 MB/s
Random Read: 173,000 IOPS
Random Write: 140,000 IOPS
Endurance: 330 TBW
Warranty: 3 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.6
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

1 main core using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.

Jun 2nd, 2024 18:09 EDT change timezone

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