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Kingston NV1 1 TB (Phison E13T + Micron N18A)

1 TB
Capacity
Phison 13T
Controller
QLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

PCB Front
PCB Front
NAND Die
NAND Die
The Kingston NV1 is a solid-state drive in the M.2 2280 form factor, launched on May 6th, 2021. It is available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Kingston NV1 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS3113-13T from Phison, a DRAM cache is not available. Kingston has installed 64-layer QLC NAND flash on the NV1, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The NV1 is rated for sequential read speeds of up to 2,100 MB/s and 1,700 MB/s write.
At its launch, the SSD was priced at 85 USD. The warranty length is set to five years, which is an excellent warranty period. Kingston guarantees an endurance rating of 240 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: May 6th, 2021
Price at Launch: 85 USD
Part Number: SNVS/1000G
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.22 W (Idle)
1.0 W (Avg)
3.3 W (Max)

Controller

Manufacturer: Phison
Name: PS3113-13T
Architecture: ARM 32-bit
Core Count: Single-Core
Flash Channels: 2
Chip Enables: 8
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: N18A FortisFlash
Rebranded: FH25608UCN1-4D (Rebranded by Kingston)
Type: QLC
Technology: 64-layer
Speed: 50 MT/s .. 800 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 20 nm
Die Size: 157 mm²
(6.5 Gbit/mm²)
Dies per Chip: 2 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 127 µs
Program Time (tProg): 3000 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 503 MB/s
Die Write Speed: 21 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 3072 Pages
Plane Size: 684 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,100 MB/s
Sequential Write: 1,700 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 240 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

tR Average as pSLC mode: 52 µs
tPROG with overhead: 3000 µs (Avg 21.3 MB/s per die)

Jun 2nd, 2024 18:55 EDT change timezone

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