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Kioxia Exceria Plus 1 TB

1 TB
Capacity
Phison E12S
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Front
Back
Back
SSD Controller
Controller
NAND Die
NAND Die
The Kioxia Exceria Plus was a solid-state drive in the M.2 2280 form factor, launched on June 25th, 2020, that is no longer in production. It was available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Kioxia Exceria Plus interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12S-32 from Phison, a DRAM cache chip is available. Kioxia has installed 96-layer TLC NAND flash on the Exceria Plus, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The Exceria Plus is rated for sequential read speeds of up to 3,400 MB/s and 3,200 MB/s write; random IOPS reach up to 680K for reads and 620K for writes.
At its launch, the SSD was priced at 110 USD. The warranty length is set to five years, which is an excellent warranty period. Kioxia guarantees an endurance rating of 400 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: End-of-life
Released: Jun 25th, 2020
Price at Launch: 110 USD
Part Number: LRD10Z001TG8
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown (Idle)
Unknown (Avg)
6.5 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12S-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Rebranded: TH58LT0T24BS8C
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 8 chips @ Unknown
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2666
Name: Samsung K4A4G165WC-BCTD
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 3,200 MB/s
Random Read: 680,000 IOPS
Random Write: 620,000 IOPS
Endurance: 400 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)
Jun 2nd, 2024 16:48 EDT change timezone

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