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Klevv CRAS CR700 RGB 480 GB

480 GB
Capacity
SM2263EN
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
SSD Controller
Controller
NAND Die
NAND Die
The Klevv CRAS CR700 RGB is a solid-state drive in the M.2 2280 form factor, launched on May 16th, 2019. It is available in capacities ranging from 480 GB to 960 GB. This page reports specifications for the 480 GB variant. With the rest of the system, the Klevv CRAS CR700 RGB interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263EN from Silicon Motion. Klevv has installed 72-layer TLC NAND flash on the CRAS CR700 RGB, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 12 GB, once it is full, writes complete at 795 MB/s. The CRAS CR700 RGB is rated for sequential read speeds of up to 1,500 MB/s and 1,300 MB/s write; random IOPS reach up to 255K for reads and 220K for writes.
At its launch, the SSD was priced at 160 USD. The warranty length is set to five years, which is an excellent warranty period. Klevv guarantees an endurance rating of 200 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 480 GB
Variants: 480 GB 960 GB
Overprovisioning: 65.0 GB / 14.5 %
Production: Active
Released: May 16th, 2019
Price at Launch: 160 USD
Part Number: K480GM2SP0-C7R
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.81 W (Idle)
3.7 W (Avg)
5.4 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2263EN
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 650 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM

NAND Flash

Manufacturer: SK Hynix
Name: V4
Type: TLC
Technology: 72-layer
Speed: 800 MT/s
Capacity: 4 chips @ 1 Tbit
Toggle: 3.0
Topology: Charge Trap
Dies per Chip: 2 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 82 per NAND String
87.8% Vertical Efficiency
Page Size: 16 KB

DRAM Cache

Type and Size: Unknown

Performance

Sequential Read: 1,500 MB/s
Sequential Write: 1,300 MB/s
Random Read: 255,000 IOPS
Random Write: 220,000 IOPS
Endurance: 200 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 12 GB
(dynamic only)
Speed when Cache Exhausted: approx. 795 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: Yes
PS5 Compatible: No

Reviews

Notes

Controller:

Controller speed not confirmed, it can vary from drive to drive.

NAND Die:

This die is divided into 2 decks of 82 gate layers.
Upper deck:
3x DSTs (DSL)
3x SSL
4x Dummy Word Lines
32x Word Lines (32 TLC Layers)

2x Dummy word lines in between each decks

Lower deck:
40x Word Lines (40 TLC Layers)

Jun 2nd, 2024 18:58 EDT change timezone

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