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Sony Nextorage NEM-PA (PS5) 4 TB (Micron B47R)

4 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Sony Nextorage NEM-PA (PS5) is a solid-state drive in the M.2 2280 form factor, launched on September 16th, 2021. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Sony Nextorage NEM-PA (PS5) interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Sony has installed 176-layer TLC NAND flash on the Nextorage NEM-PA (PS5), the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 440 GB, once it is full, writes complete at 3600 MB/s. Copying data out of the SLC cache (folding) completes at 1900 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Nextorage NEM-PA (PS5) is rated for sequential read speeds of up to 7,300 MB/s and 6,900 MB/s write; random IOPS reach up to 1000K for reads and 1000K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Sony guarantees an endurance rating of 3000 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 370.7 GB / 10.0 %
Production: Active
Released: Sep 16th, 2021
Part Number: Nextorage NEM-PA
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 8 chips @ 4 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: DDR4
Name: SK Hynix
Capacity: 2048 MB
(2x 1024 MB)

Performance

Sequential Read: 7,300 MB/s
Sequential Write: 6,900 MB/s
Random Read: 1,000,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 3000 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 440 GB
(dynamic only)
Speed when Cache Exhausted: approx. 3600 MB/s
Cache Folding Speed: 1900 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)
May 31st, 2024 17:29 EDT change timezone

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