Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 2 TB (2048 GB) |
---|---|
Hardware Versions: |
|
Overprovisioning: | 140.7 GB / 7.4 % |
Production: | Active |
Released: | 2018 |
Part Number: | ASX8200PNP-2TT-C |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
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Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: | Unknown |
Manufacturer: | Silicon Motion |
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Name: | SM2262G |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Dual-Core |
Frequency: | 575 MHz |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | SK Hynix |
---|---|
Name: | V6 |
Rebranded: | 60078667 (Rebranded by ADATA) |
Type: | TLC |
Technology: | 128-layer |
Speed: | 1400 MT/s |
Capacity: | 4 chips @ 4 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Die Size: | 63 mm² (8.1 Gbit/mm²) |
Dies per Chip: | 8 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
147 per NAND String
87.1% Vertical Efficiency |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 1536 Pages |
Plane Size: | 722 Blocks |
Type: | DDR4-2666 CL19 |
---|---|
Name: | Samsung K4A8G165WC-BCTD (C-die) |
Capacity: |
2048 MB
(2x 1024 MB) |
Organization: | 8Gx16 |
Sequential Read: | 3,500 MB/s |
---|---|
Sequential Write: | 3,000 MB/s |
Random Read: | 360,000 IOPS |
Random Write: | 360,000 IOPS |
Endurance: | 1280 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 0.3 |
SLC Write Cache: |
approx. 150 GB
(dynamic only) |
Speed when Cache Exhausted: | approx. 800 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
NAND Die:Each die has 7 SGSs with 3 SGDs. |