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Acer GM3500 512 GB

512 GB
Capacity
SM2262ENG
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
PCB Front
PCB Front
SSD Controller
Controller
The Acer GM3500 is a solid-state drive in the M.2 2280 form factor, launched on April 21st, 2021. It is available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Acer GM3500 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2262ENG from Silicon Motion, a DRAM cache chip is available. Acer has installed 96-layer TLC NAND flash on the GM3500, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 75 GB, once it is full, writes complete at 500 MB/s. The GM3500 is rated for sequential read speeds of up to 3,400 MB/s and 2,400 MB/s write; random IOPS reach up to 190K for reads and 350K for writes.
At its launch, the SSD was priced at 65 USD. The warranty length is set to five years, which is an excellent warranty period. Acer guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Apr 21st, 2021
Price at Launch: 65 USD
Part Number: GM3500-512GB
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.76 W (Idle)
Unknown (Avg)
4.2 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2262ENG
Architecture: ARM 32-bit Cortex R5
Core Count: Dual-Core
Frequency: 625 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B27B FortisFlash
Rebranded: BW29F2T08EMLCEJ4 (Rebranded by Biwin)
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 1200 MT/s
Capacity: 2 chips @ 2 Tbit
ONFI: 4.1
Topology: Floating Gate
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 108 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 87 µs
Program Time (tProg): 800 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 84 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 3456 Pages
Plane Size: 338 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: NANYA NT5AD256M16D4-HR
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 2,400 MB/s
Random Read: 190,000 IOPS
Random Write: 350,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 75 GB
(dynamic only)
Speed when Cache Exhausted: approx. 500 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

Controller clock speed might vary depending on the drive, from 575 MHz to 650 MHz

NAND Die:

tPROG - 800 µs (withouh Vpp)
tPROG w/ ~ 25% Overhead: ~ 914 µs (Avg 70 MB/s per each die)

Jun 1st, 2024 10:06 EDT change timezone

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