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Corsair MP600 PRO 2 TB

2 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
PCB Front
Storage Review
PCB Front
PCB Back
Storage Review
PCB Back
SSD Controller
Controller
The Corsair MP600 PRO is a solid-state drive in the M.2 2280 form factor, launched in 2021. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Corsair MP600 PRO interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Corsair has installed 96-layer TLC NAND flash on the MP600 PRO, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 225 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The MP600 PRO is rated for sequential read speeds of up to 7,100 MB/s and 6,550 MB/s write; random IOPS reach up to 800K for reads and 660K for writes.
At its launch, the SSD was priced at 435 USD. The warranty length is set to five years, which is an excellent warranty period. Corsair guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: 2021
Price at Launch: 435 USD
Part Number: CSSD-F2000GBMP600PRO
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B27B FortisFlash
Part Number: IA7BG64AIA
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 1200 MT/s
Capacity: 8 chips @ 2 Tbit
ONFI: 4.1
Topology: Floating Gate
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 108 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 87 µs
Program Time (tProg): 800 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 84 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 3456 Pages
Plane Size: 338 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SK Hynix H5AN8G6NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,100 MB/s
Sequential Write: 6,550 MB/s
Random Read: 800,000 IOPS
Random Write: 660,000 IOPS
Endurance: 1400 TBW
Warranty: 5 Years
MTBF: 1.7 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 225 GB
(dynamic only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

tPROG - 800 µs (withouh Vpp)
tPROG w/ ~ 25% Overhead: ~ 914 µs (Avg 70 MB/s per each die)

Jun 1st, 2024 07:41 EDT change timezone

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