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DapuStor Roealsen5 R5310 6 TB (Kioxia BiCS5 eTLC)

6 TB
Capacity
DP616
Controller
TLC
Flash
PCIe 4.0 x8
Interface
Add-In Card
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Front
SSD Controller
Controller
The DapuStor Roealsen5 R5310 is a solid-state drive in the Add-In Card form factor. It is only available in the 6 TB capacity listed on this page. With the rest of the system, the DapuStor Roealsen5 R5310 interfaces using a PCI-Express 4.0 x8 connection. The SSD controller is the DP616 from DapuStor. DapuStor has installed 112-layer TLC NAND flash on the Roealsen5 R5310, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Roealsen5 R5310 is rated for sequential read speeds of up to 12,700 MB/s and 5,900 MB/s write; random IO reaches 1850K IOPS for read and 570K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. DapuStor guarantees an endurance rating of 35040 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 6 TB (6400 GB)
Hardware Versions:
  • Kioxia BiCS4 eTLC
    3 TB
  • Kioxia BiCS5 eTLC
    6 TB
Overprovisioning: 2231.5 GB / 37.4 %
Production: Active
Released: Unknown
Part Number: Unknown
Market: Enterprise

Physical

Form Factor: Add-In Card
Interface: PCIe 4.0 x8
Protocol: NVMe 1.4
Power Draw: 7.0 W (Idle)
Unknown (Avg)
19.0 W (Max)

Controller

Manufacturer: DapuStor
Name: DP616
Architecture: ARM Cortex-A53
Core Count: 8-Core
Frequency: 1,800 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 16 @ 1,600 MT/s
Chip Enables: 8
Controller Features: DRAM

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: Unknown
Toggle: 4.0
Topology: Charge Trap
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks

DRAM Cache

Type and Size: Unknown

Performance

Sequential Read: 12,700 MB/s
Sequential Write: 5,900 MB/s
Random Read: 1,850,000 IOPS
Random Write: 570,000 IOPS
Endurance: 35040 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 3.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.
Jun 1st, 2024 04:55 EDT change timezone

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