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Goodram PX500 1 TB (SM2263XT + YTMC BCT1B)

1 TB
Capacity
SM2263XT
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Goodram PX500 is a solid-state drive in the M.2 2280 form factor, launched on March 24th, 2020. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Goodram PX500 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the SM2263XT from Silicon Motion, a DRAM cache is not available. Goodram has installed 64-layer TLC NAND flash on the PX500, the flash chips are made by YMTC. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The PX500 is rated for sequential read speeds of up to 2,050 MB/s and 1,650 MB/s write; random IO reaches 171K IOPS for read and 143K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Goodram guarantees an endurance rating of 660 TBW, a good value.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 256 GB 512 GB 1 TB
Hardware Versions:
Overprovisioning: 70.3 GB / 7.4 %
Production: Unknown
Released: Mar 24th, 2020
Part Number: SSDPR-PX500-01T-80
Market: Consumer

Physical

Form Factor: M.2 2280
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2263XT
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Frequency: 575 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 4 @ 800 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: YMTC
Name: Xtacking 1.0
Type: TLC
Technology: 64-layer
Speed: 800 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Topology: Charge Trap
Process: 40 nm
Die Size: 58 mm²
(4.4 Gbit/mm²)
Dies per Chip: 8 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 73 per NAND String
87.7% Vertical Efficiency
Read Time (tR): 74 µs
Program Time (tProg): 760 µs
Block Erase Time (tBERS): 9.0 ms
Die Read Speed: 432 MB/s
Die Write Speed: 42 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1006 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,050 MB/s
Sequential Write: 1,650 MB/s
Random Read: 171,000 IOPS
Random Write: 143,000 IOPS
Endurance: 660 TBW
Warranty: 3 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.6
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

The difference between this and the non-XT revision (SM2263, SM2263G, SM2263ENG, etc.) is that this revision doesn't support the DRAM cache, in fact it uses HMB (Host Memory Buffer).

NAND Die:

Array Eficiency of over 90%
The 64-Word Layers NAND Die from YMTC actuall has 73-Gate Layers, being 64 for storage, 5 DWL (Dummy Word Layers) alongside 4 select Gates (1 SG and 3 Drain SGs)

PS: Bit-line pitch is 40nm
NAND Die Endurance: From 1500 to 3000 P.E.C.
NAND Flash Bus: Up to 800 MT/s
Page Read in SLC Mode: 34µs
Page Write in SLC Mode: 34µs
Block Erase in SLC Mode: 3.3ms

Jun 1st, 2024 08:07 EDT change timezone

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