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Hikvision C100 480 GB

480 GB
Capacity
MAS1102B-B1C
Controller
QLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Hikvision C100 is a solid-state drive in the 2.5" form factor. It is available in capacities ranging from 120 GB to 480 GB. This page reports specifications for the 480 GB variant. With the rest of the system, the Hikvision C100 interfaces using a SATA 6 Gbps connection. The SSD controller is the MAS1102B-B1C from MaxioTech, a DRAM cache is not available. Hikvision has installed 144-layer QLC NAND flash on the C100, the flash chips are made by Intel. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The C100 is rated for sequential read speeds of up to 550 MB/s and 470 MB/s write; random IOPS reach up to 63K for reads and 76K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Hikvision guarantees an endurance rating of 200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 480 GB
Variants: 120 GB 240 GB 480 GB
Overprovisioning: 65.0 GB / 14.5 %
Production: Active
Released: Unknown
Part Number: HS-SSD-C100/480G
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: Unknown

Controller

Manufacturer: MaxioTech
Name: MAS1102B-B1C
Architecture: ARM 32-bit
Flash Channels: 2 @ 667 MT/s
Chip Enables: 8

NAND Flash

Manufacturer: Intel
Name: N38A
Rebranded: INB0I001Tb71AA1CZ M48-59
Type: QLC
Technology: 144-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 1 Tbit
Topology: Replacement Gate
Die Size: 80 mm²
(12.8 Gbit/mm²)
Dies per Chip: 1 die @ 1 Tbit
Planes per Die: 4
Decks per Die: 3
Word Lines: 161 per NAND String
89.4% Vertical Efficiency
Read Time (tR): 85 µs
Program Time (tProg): 1630 µs
Block Erase Time (tBERS): 35 ms
Die Read Speed: 752 MB/s
Die Write Speed: 40 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 9216 Pages
Plane Size: 1032 Blocks

DRAM Cache

Type: None

Performance

Sequential Read: 550 MB/s
Sequential Write: 470 MB/s
Random Read: 63,000 IOPS
Random Write: 76,000 IOPS
Endurance: 200 TBW
Warranty: 3 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Block size is 48MB
Block Erase Time (tBERS): Maximum is 35 ms

Jun 1st, 2024 02:49 EDT change timezone

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