Report an Error

Hikvision E100N 512 GB (SM2259XT + Micron B47R)

512 GB
Capacity
SM2259XT
Controller
TLC
Flash
SATA 6 Gbps
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Hikvision E100N is a solid-state drive in the M.2 2280 form factor, launched on August 7th, 2021. It is available in capacities ranging from 128 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Hikvision E100N interfaces using a SATA 6 Gbps connection. The SSD controller is the SM2259XT from Silicon Motion, a DRAM cache is not available. Hikvision has installed 176-layer TLC NAND flash on the E100N, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The E100N is rated for sequential read speeds of up to 550 MB/s and 510 MB/s write; random IO reaches 90K IOPS for read and 75K for writes.
At its launch, the SSD was priced at 55 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Hikvision guarantees an endurance rating of 140 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 128 GB 256 GB 512 GB 1 TB
Hardware Versions:
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Aug 7th, 2021
Price at Launch: 55 USD
Part Number: HS-SSD-E100N-512GB
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.06 W (Idle)
Unknown (Avg)
2.5 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2259XT
Architecture: ARC 32-bit
Core Count: Single-Core
Frequency: 437 MHz
Process: 28 nm
Flash Channels: 4 @ 525 MT/s
Chip Enables: 4

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 4 chips @ 1 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 2 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: None

Performance

Sequential Read: 550 MB/s
Sequential Write: 510 MB/s
Random Read: 90,000 IOPS
Random Write: 75,000 IOPS
Endurance: 140 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

This controller - as per all "XT" Silicon Motion's controller - doesn't support DRAM. It may be clocked above 400 MHz.

NAND Die:

This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Jun 1st, 2024 06:31 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts