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Intel DC S3510 1.2 TB

1.2 TB
Capacity
PC29AS21CB0
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Intel DC S3510 was a solid-state drive in the 2.5" form factor, launched in May 2015, that is no longer in production. It was available in capacities ranging from 80 GB to 1.6 TB. This page reports specifications for the 1.2 TB variant. With the rest of the system, the Intel DC S3510 interfaces using a SATA 6 Gbps connection. The SSD controller is the PC29AS21CB0 from Intel, a DRAM cache chip is available. Intel has installed MLC NAND flash on the DC S3510, the flash chips are made by Micron. The DC S3510 is rated for sequential read speeds of up to 500 MB/s and 440 MB/s write; random IOPS reach up to 67K for reads and 20K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Intel guarantees an endurance rating of 660 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1.2 TB (1200 GB)
Variants: 80 GB 120 GB 240 GB 480 GB 800 GB 1.2 TB 1.6 TB
Overprovisioning: Unknown
Production: End-of-life
Released: May 2015
Part Number: SSDSC2BB012T6
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.70 W (Idle)
3.8 W (Avg)
7.0 W (Max)

Controller

Manufacturer: Intel
Name: PC29AS21CB0
Architecture: ARM
Flash Channels: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: L95B (16nm)
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 333 MT/s
Capacity: Unknown
ONFI: 3.2
Topology: Floating Gate
Process: 16 nm
Planes per Die: 2
Read Time (tR): 115 µs
Program Time (tProg): 1600 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 278 MB/s
Die Write Speed: 20 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
Block Size: 512 Pages
Plane Size: 1048 Blocks

DRAM Cache

Type: DDR3L
Capacity: Unknown

Performance

Sequential Read: 500 MB/s
Sequential Write: 440 MB/s
Random Read: 67,000 IOPS
Random Write: 20,000 IOPS
Endurance: 660 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.3
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks

• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)
Jun 1st, 2024 05:25 EDT change timezone

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