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Kingston KC3000 1 TB (Kioxia BiCS5 HDR 512Gb)

1 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
The Kingston KC3000 is a solid-state drive in the M.2 2280 form factor, launched in 2023. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Kingston KC3000 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Kingston has installed 112-layer TLC NAND flash on the KC3000, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The KC3000 is rated for sequential read speeds of up to 7,000 MB/s and 6,000 MB/s write; random IO reaches 900K IOPS for read and 1000K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Kingston guarantees an endurance rating of 800 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 1 TB 2 TB
Hardware Versions:
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: 2023
Part Number: SKC3000S/1024G
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.72 W (Idle)
4.1 W (Avg)
6.0 W (Max)

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks
Operating frequency:1333 MT/s (666.5MHz)

DRAM Cache

Type: DDR4
Capacity: 1024 MB
(1x 1024 MB)

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 6,000 MB/s
Random Read: 900,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 800 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 P.E.C.
Rated Endurance: 3.000 to 5.000 (up to) P.E.C.

Jun 1st, 2024 10:32 EDT change timezone

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