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Klevv CRAS C920 2 TB

2 TB
Capacity
Phison E18
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Package
Package
PCB Back
PCB Back
Flash
Flash
DRAM
DRAM
SSD Controller
Controller
The Klevv CRAS C920 is a solid-state drive in the M.2 2280 form factor, launched on June 16th, 2021. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Klevv CRAS C920 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5018-E18-41 from Phison, a DRAM cache chip is available. Klevv has installed 96-layer TLC NAND flash on the CRAS C920, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 666 GB, once it is full, writes complete at 1400 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The CRAS C920 is rated for sequential read speeds of up to 7,000 MB/s and 5,500 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Klevv guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: Jun 16th, 2021
Part Number: K02TBM2SP0-C92
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5018-E18-41
Architecture: ARM 32-bit Cortex-R5
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 1,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B27B FortisFlash
Part Number: IA7BG64AIA
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 1200 MT/s
Capacity: 8 chips @ 2 Tbit
ONFI: 4.1
Topology: Floating Gate
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 108 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 87 µs
Program Time (tProg): 800 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 84 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 3456 Pages
Plane Size: 338 Blocks

DRAM Cache

Type: DDR4-2666 CL16
Name: H5AN8G6NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 5,500 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 1400 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 666 GB
(dynamic only)
Speed when Cache Exhausted: approx. 1400 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz)

NAND Die:

tPROG - 800 µs (withouh Vpp)
tPROG w/ ~ 25% Overhead: ~ 914 µs (Avg 70 MB/s per each die)

Jun 1st, 2024 11:03 EDT change timezone

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