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Lexar NS200 960 GB

960 GB
Capacity
SM2258H
Controller
TLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Lexar NS200 was a solid-state drive in the 2.5" form factor, launched on September 28th, 2018, that is no longer in production. It was available in capacities ranging from 240 GB to 960 GB. This page reports specifications for the 960 GB variant. With the rest of the system, the Lexar NS200 interfaces using a SATA 6 Gbps connection. The SSD controller is the SM2258H from Silicon Motion. Lexar has installed 64-layer TLC NAND flash on the NS200, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The NS200 is rated for sequential read speeds of up to 560 MB/s and 510 MB/s write; random IO reaches 95K IOPS for read and 91K for writes.
At its launch, the SSD was priced at 108 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Lexar guarantees an endurance rating of 480 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 960 GB
Variants: 240 GB 480 GB 960 GB
Overprovisioning: 129.9 GB / 14.5 %
Production: End-of-life
Released: Sep 28th, 2018
Price at Launch: 108 USD
Part Number: LNS200-960RBNA
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2258H
Architecture: ARC
Core Count: Single-Core
Frequency: 400 MHz
Foundry: TSMC
Process: 40 nm
Flash Channels: 4
Chip Enables: 8
Controller Features: DRAM

NAND Flash

Manufacturer: Micron
Name: B17A FortisFlash
Type: TLC
Technology: 64-layer
Speed: 50 MT/s .. 667 MT/s
Capacity: 4 chips @ 2 Tbit
ONFI: 4.0
Topology: Floating Gate
Process: 16 nm
Die Size: 108 mm²
(4.7 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 74 per NAND String
86.5% Vertical Efficiency
Read Time (tR): 88 µs
Program Time (tProg): 930 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 727 MB/s
Die Write Speed: 69 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 504 Blocks

DRAM Cache

Type: Unknown
Capacity: 1024 MB

Performance

Sequential Read: 560 MB/s
Sequential Write: 510 MB/s
Random Read: 95,000 IOPS
Random Write: 91,000 IOPS
Endurance: 480 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.5
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

tPROG with some Overhead: ~ 930µs (Avg)
Effective Program page time without VPP : 1900μs(TYP) ( ~ 33 MB/s)

Jun 1st, 2024 06:46 EDT change timezone

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