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Netac NV7000 1 TB (IG5236 + SK Hynix)

1 TB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Netac NV7000 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Netac NV7000 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Netac has installed 128-layer TLC NAND flash on the NV7000, the flash chips are made by SK Hynix. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 330 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The NV7000 is rated for sequential read speeds of up to 7,200 MB/s and 5,500 MB/s write; random IO reaches 460K IOPS for read and 920K for writes.
At its launch, the SSD was priced at 207 USD. The warranty length is set to five years, which is an excellent warranty period. Netac guarantees an endurance rating of 640 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB
Hardware Versions:
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2022
Price at Launch: 207 USD
Part Number: NT01NV7000-1T0-E4X
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.73 W (Idle)
4.2 W (Avg)
5.5 W (Max)

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V6
Type: TLC
Technology: 128-layer
Speed: 1400 MT/s
Capacity: 4 chips @ 1 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 63 mm²
(8.1 Gbit/mm²)
Dies per Chip: 2 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 147 per NAND String
87.1% Vertical Efficiency
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 1536 Pages
Plane Size: 722 Blocks

DRAM Cache

Type: DDR4
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 7,200 MB/s
Sequential Write: 5,500 MB/s
Random Read: 460,000 IOPS
Random Write: 920,000 IOPS
Endurance: 640 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 330 GB
(dynamic only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

NAND Die:

Each die has 7 SGSs with 3 SGDs.

Jun 1st, 2024 02:37 EDT change timezone

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