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Samsung 950 PRO 512 GB

512 GB
Capacity
Samsung UBX
Controller
MLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 950 PRO was a solid-state drive in the M.2 2280 form factor, launched in October 2015, that is no longer in production. It was available in capacities ranging from 256 GB to 512 GB. This page reports specifications for the 512 GB variant. With the rest of the system, the Samsung 950 PRO interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the UBX (S4LN058A01-8030) from Samsung, a DRAM cache chip is available. Samsung has installed 32-layer MLC NAND flash on the 950 PRO, the flash chips are made by Samsung. The 950 PRO is rated for sequential read speeds of up to 2,200 MB/s and 1,500 MB/s write; random IO reaches 300K IOPS for read and 110K for writes.
At its launch, the SSD was priced at 350 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB
Overprovisioning: 35.2 GB / 7.4 %
Production: End-of-life
Released: Oct 2015
Price at Launch: 350 USD
Part Number: MZ-V5P512BW
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.1
Power Draw: 1.7 W (Idle)
5.7 W (Avg)
7.0 W (Max)

Controller

Manufacturer: Samsung
Name: UBX (S4LN058A01-8030)
Architecture: ARM 32-bit Cortex R4
Core Count: Triple-Core
Frequency: 500 MHz
Foundry: Samsung
Process: 32 nm
Flash Channels: 8 @ 533 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V2
Type: MLC
Technology: 32-layer
Speed: 1000 MT/s
Capacity: 2 chips @ Unknown
Topology: Charge Trap
Planes per Die: 2
Decks per Die: 1
Endurance:
(up to)
6000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB

DRAM Cache

Type: LPDDR3-1600
Name: SAMSUNG K4E4E324EL-SGCF
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx32
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 2,200 MB/s
Sequential Write: 1,500 MB/s
Random Read: 300,000 IOPS
Random Write: 110,000 IOPS
Endurance: 400 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.4
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
RGB Lighting: No
PS5 Compatible: No

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Notes

Jun 1st, 2024 03:15 EDT change timezone

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