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Samsung 970 EVO 2 TB

2 TB
Capacity
Samsung Phoenix
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor
Back
Back
Package
Package
Flash
Tom's Hardware
Flash
DRAM
Tom's Hardware
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 970 EVO was a solid-state drive in the M.2 2280 form factor, launched on May 7th, 2018, that is no longer in production. It was available in capacities ranging from 250 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Samsung 970 EVO interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Phoenix (S4LR020) from Samsung, a DRAM cache chip is available. Samsung has installed 64-layer TLC NAND flash on the 970 EVO, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 78 GB, once it is full, writes complete at 1250 MB/s. The 970 EVO is rated for sequential read speeds of up to 3,500 MB/s and 2,500 MB/s write; random IO reaches 500K IOPS for read and 480K for writes.
At its launch, the SSD was priced at 850 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 250 GB 500 GB 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: End-of-life
Released: May 7th, 2018
Price at Launch: 850 USD
Part Number: MZ-V7E2T0BW
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.03 W (Idle)
5.7 W (Avg)
10.0 W (Max)

Controller

Manufacturer: Samsung
Name: Phoenix (S4LR020)
Architecture: ARM 32-bit Cortex-R7
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V4
Part Number: K9DVGY8J5M-DCK0
Type: TLC
Technology: 64-layer
Speed: 1000 MT/s
Capacity: 2 chips @ 8 Tbit
Toggle: 3.0
Topology: Charge Trap
Process: 20 nm
Die Size: 128 mm²
(4.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 72 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 700 µs
Block Erase Time (tBERS): 3.5 ms
Endurance:
(up to)
7000 P/E Cycles
(20000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 5748 Blocks

DRAM Cache

Type: LPDDR4-1866
Name: SAMSUNG K4F8E3D4HF-BGCH
Capacity: 2048 MB
(1x 2048 MB)
Organization: 16Gx32
Host-Memory-Buffer (HMB): N/A

Performance

Sequential Read: 3,500 MB/s
Sequential Write: 2,500 MB/s
Random Read: 500,000 IOPS
Random Write: 480,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 78 GB
(72 GB Dynamic
+ 6 GB Static)
Speed when Cache Exhausted: approx. 1250 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Has two variants:
Rev. 1: Samsung V3 V-NAND 48-Layers
Rev. 2: Samsung V4 V-NAND 64-Layers

Jun 1st, 2024 03:55 EDT change timezone

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