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Samsung 980 500 GB (V-NAND V6 512Gb)

500 GB
Capacity
Samsung Pablo
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Back
Back
Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 980 is a solid-state drive in the M.2 2280 form factor, launched in September 2020. It is available in capacities ranging from 250 GB to 1 TB. This page reports specifications for the 500 GB variant. With the rest of the system, the Samsung 980 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Pablo (S4LR033) from Samsung, a DRAM cache is not available. Samsung has installed 128-layer TLC NAND flash on the 980, the flash chips are made by Samsung. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 122 GB, once it is full, writes complete at 400 MB/s. The 980 is rated for sequential read speeds of up to 3,100 MB/s and 2,600 MB/s write; random IOPS reach up to 400K for reads and 470K for writes.
At its launch, the SSD was priced at 70 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 300 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 500 GB
Variants: 250 GB 500 GB 1 TB
Hardware Versions:
Overprovisioning: 46.3 GB / 10.0 %
Production: Active
Released: Sep 2020
Price at Launch: 70 USD
Part Number: MZ-V8V500BW
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.4
Power Draw: 0.05 W (Idle)
4.3 W (Avg)
5.9 W (Max)

Controller

Manufacturer: Samsung
Name: Pablo (S4LR033)
Architecture: ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-R5
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V6
Type: TLC
Technology: 128-layer
Speed: 1200 MT/s
Capacity: 1 chip @ 4 Tbit
Toggle: 4.0
Topology: Charge Trap
Die Size: 102 mm²
(5.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 136 per NAND String
94.1% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 390 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 711 MB/s
Die Write Speed: 82 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 3,100 MB/s
Sequential Write: 2,600 MB/s
Random Read: 400,000 IOPS
Random Write: 470,000 IOPS
Endurance: 300 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 122 GB
(dynamic only)
Speed when Cache Exhausted: approx. 400 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-128
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

A Dual-plane Die with 2 sub-planes with 8 KiB pages in order to improve performance through paralellism.
Endurance: Could be from 1.500 to 3.000 P.E.C. depending on NAND binning

May 17th, 2024 11:43 EDT change timezone

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