Report an Error

Samsung 983 ZET 960 GB

960 GB
Capacity
Samsung Phoenix
Controller
SLC
Flash
PCIe 3.0 x4
Interface
Add-In Card
Form Factor
Package
Tom's Hardware
Package
PCB Front
Tom's Hardware
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Samsung 983 ZET was a solid-state drive in the Add-In Card form factor, launched on September 24th, 2018, that is no longer in production. It was available in capacities ranging from 480 GB to 960 GB. This page reports specifications for the 960 GB variant. With the rest of the system, the Samsung 983 ZET interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the Phoenix (S4LR020) from Samsung, a DRAM cache chip is available. Samsung has installed 48-layer SLC NAND flash on the 983 ZET, the flash chips are made by Samsung. The 983 ZET is rated for sequential read speeds of up to 3,400 MB/s and 3,000 MB/s write; random IOPS reach up to 750K for reads and 75K for writes.
At its launch, the SSD was priced at 1999 USD. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 17520 TBW, an extremely high value, making this drive fit for demanding enterprise applications.

Solid-State-Drive

Capacity: 960 GB
Variants: 480 GB 960 GB
Overprovisioning: 129.9 GB / 14.5 %
Production: End-of-life
Released: Sep 24th, 2018
Price at Launch: 1999 USD
Part Number: MZ-PZA960BW
Market: Enterprise

Physical

Form Factor: Add-In Card
Interface: PCIe 3.0 x4
Protocol: NVMe 1.2
Power Draw: 5.5 W (Idle)
8.5 W (Avg)
9.0 W (Max)

Controller

Manufacturer: Samsung
Name: Phoenix (S4LR020)
Architecture: ARM 32-bit Cortex-R7
Core Count: 5-Core
Foundry: Samsung FinFET
Process: 14 nm
Flash Channels: 8
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: Z-NAND V1
Part Number: K9QHGB8J0M-CCB0
Type: SLC
Technology: 48-layer
Speed: 667 MT/s
Capacity: 16 chips @ 512 Gbit
Topology: Charge Trap
Die Size: 101 mm²
(0.6 Gbit/mm²)
Dies per Chip: 8 dies @ 64 Gbit
Planes per Die: 8
Read Time (tR): 3 µs
Program Time (tProg): 100 µs
Die Write Speed: 160 MB/s
Page Size: 2 KB

DRAM Cache

Type: LPDDR4
Name: Samsung K4F2E3S4HA-BGCH
Capacity: 1536 MB
(1x 1536 MB)

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 3,000 MB/s
Random Read: 750,000 IOPS
Random Write: 75,000 IOPS
Endurance: 17520 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 10.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

Drive:

Comes with 3 Capacitors for Power loss Protection

NAND Die:

To further minimize read latency, I/O circuit support a DDR
interface for both ×8 and ×16 mode. It can also operate with a 4 KB page size(x16 mode) while the standard 2KB page mode comes with x8 mode.

Jun 1st, 2024 06:39 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts