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Samsung PM1725A 3 TB

3 TB
Capacity
EPIC
Controller
TLC
Flash
PCIe 3.0 x8
Interface
Add-In Card
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Samsung PM1725A was a solid-state drive in the Add-In Card form factor, launched in 2018, that is no longer in production. It was available in capacities ranging from 1.6 TB to 6 TB. This page reports specifications for the 3 TB variant. With the rest of the system, the Samsung PM1725A interfaces using a PCI-Express 3.0 x8 connection. The SSD controller is the EPIC (S4LP049X01) from Samsung, a DRAM cache chip is available. Samsung has installed 48-layer TLC NAND flash on the PM1725A, the flash chips are made by Samsung. The PM1725A is rated for sequential read speeds of up to 6,200 MB/s and 2,600 MB/s write; random IO reaches 1000K IOPS for read and 180K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Samsung guarantees an endurance rating of 29200 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 3 TB (3200 GB)
Variants: 1.6 TB 3 TB 6 TB
Overprovisioning: 1115.8 GB / 37.4 %
Production: End-of-life
Released: 2018
Part Number: MZPLL3T2HMLS-000MV
Market: Enterprise

Physical

Form Factor: Add-In Card
Interface: PCIe 3.0 x8
Protocol: NVMe 1.1
Power Draw: 7.7 W (Idle)
Unknown (Avg)
23.0 W (Max)

Controller

Manufacturer: Samsung
Name: EPIC (S4LP049X01)
Architecture: ARM 32-bit Cortex-R7 + MPU
Core Count: Dual-Core
Frequency: 750 MHz
Foundry: Samsung
Process: 28 nm
Flash Channels: 16
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V3
Part Number: K9DUGB8SJM-DCK0
Type: TLC
Technology: 48-layer
Speed: 1000 MT/s
Capacity: 8 chips @ 4 Tbit
Topology: Charge Trap
Die Size: 98 mm²
(2.6 Gbit/mm²)
Dies per Chip: 16 dies @ 256 Gbit
Planes per Die: 2
Decks per Die: 1
Word Lines: 54 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 45 µs
Program Time (tProg): 660 µs
Block Erase Time (tBERS): 3500 ms
Die Write Speed: 53 MB/s
Page Size: 16 KB
Block Size: 576 Pages
Plane Size: 3776 Blocks

DRAM Cache

Type: DDR3-1866
Name: SAMSUNG K4B8G0846D-MCMA
Capacity: 4096 MB
(4x 1024 MB)
Organization: 8Gx8

Performance

Sequential Read: 6,200 MB/s
Sequential Write: 2,600 MB/s
Random Read: 1,000,000 IOPS
Random Write: 180,000 IOPS
Endurance: 29200 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 5.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

Jun 1st, 2024 05:52 EDT change timezone

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