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Samsung PM9C1a 1 TB

1 TB
Capacity
Samsung Piccolo
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2230
Form Factor
NAND Die
NAND Die
The Samsung PM9C1a is a solid-state drive in the M.2 2230 form factor, launched in January 2023. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the Samsung PM9C1a interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Piccolo (S4LY022) from Samsung, a DRAM cache is not available. Samsung has installed 176-layer TLC NAND flash on the PM9C1a, the flash chips are made by Samsung. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The PM9C1a is rated for sequential read speeds of up to 6,000 MB/s and 5,600 MB/s write; random IOPS reach up to 900K for reads and 1000K for writes.
The SSD's price at launch is unknown. The TBW rating for the Samsung PM9C1a 1 TB is unknown, too.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Jan 2023
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2230 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown

Controller

Manufacturer: Samsung
Name: Piccolo (S4LY022)
Architecture: ARM 32-bit Cortex-R8
Core Count: 6-Core
Foundry: Samsung FinFET
Process: 5 nm
Flash Channels: 4 @ 2,400 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Samsung
Name: V-NAND V7
Type: TLC
Technology: 176-layer
Speed: 2000 MT/s
Capacity: 1 chip @ 8 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 60 mm²
(8.5 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 191 per NAND String
92.1% Vertical Efficiency
Read Time (tR): 40 µs
Program Time (tProg): 347 µs
Block Erase Time (tBERS): 3.5 ms
Die Read Speed: 1600 MB/s
Die Write Speed: 184 MB/s
Page Size: 16 KB

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 6,000 MB/s
Sequential Write: 5,600 MB/s
Random Read: 900,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: Unknown
Warranty: Unknown
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Opal
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

Upper Deck: 101 Gates
Lower Deck: 90 Gates
tPROG without overhead: ~ 347µs (184 MB/s) per each die
tPROG w/ ~25% overhead: ~ 463µs (138 MB/s) per each die

Jun 1st, 2024 06:03 EDT change timezone

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