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Seagate BarraCuda 510 512 GB

512 GB
Capacity
Phison E12
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

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Back
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Seagate BarraCuda 510 is a solid-state drive in the M.2 2280 form factor, launched in 2019. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Seagate BarraCuda 510 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the PS5012-E12-27 from Phison. Seagate has installed 64-layer TLC NAND flash on the BarraCuda 510, the flash chips are made by Kioxia. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 13 GB, once it is full, writes complete at 630 MB/s. The BarraCuda 510 is rated for sequential read speeds of up to 3,400 MB/s and 2,100 MB/s write; random IO reaches 340K IOPS for read and 500K for writes.
At its launch, the SSD was priced at 110 USD. The warranty length is set to 6 years, which is a very long warranty, better than most other drives on the market. Seagate guarantees an endurance rating of 320 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2019
Price at Launch: 110 USD
Part Number: ZP512CM30011/ZP512CM30031
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.44 W (Idle)
2.5 W (Avg)
4.7 W (Max)

Controller

Manufacturer: Phison
Name: PS5012-E12-27
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 667 MT/s
Chip Enables: 4
Controller Features: DRAM

NAND Flash

Manufacturer: Kioxia
Name: BiCS3
Part Number: TCBBG55AIV
Type: TLC
Technology: 64-layer
Speed: 533 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 2.0
Topology: Charge Trap
Process: 19 nm
Die Size: 132 mm²
(3.9 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Read Time (tR): 80 µs
Program Time (tProg): 695 µs
Die Read Speed: 400 MB/s
Die Write Speed: 46 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 768 Pages
Plane Size: 2732 Blocks

DRAM Cache

Type: Unknown-2400
Name: SK Hynix H5AN4G8NBJR
Capacity: 512 MB
(1x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 3,400 MB/s
Sequential Write: 2,100 MB/s
Random Read: 340,000 IOPS
Random Write: 500,000 IOPS
Endurance: 320 TBW
Warranty: 6 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: approx. 13 GB
(dynamic only)
Speed when Cache Exhausted: approx. 630 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • TCG Opal
  • TCG Pyrite
RGB Lighting: No
PS5 Compatible: No

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

The controller could have changed from E12 to E12S and some revisions are Kioxia 64L TLC (BiCS3) and not 96L TLC BiCS4.

Controller:

2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience.

NAND Die:

Read latency:
tR: 64µs (SBL)
tR: 80µs (ABL)
tPROG withoug Overhead: ~ 695µs (Avg) (~ 46 MB/s per die)
tPROG w/ ~25% Overhead: ~ 927µs (Avg) (~ 34.5 MB/s per die)

Jun 1st, 2024 06:09 EDT change timezone

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