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Silicon Power XS70 2 TB (IG5236 + YMTC CDT1B)

2 TB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

PCB Front
PCB Front
SSD Controller
Controller
NAND Die
NAND Die
The Silicon Power XS70 is a solid-state drive in the M.2 2280 form factor, launched on January 16th, 2022. It is only available in the 2 TB capacity listed on this page. With the rest of the system, the Silicon Power XS70 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Silicon Power has installed 128-layer TLC NAND flash on the XS70, the flash chips are made by YMTC. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The XS70 is rated for sequential read speeds of up to 7,300 MB/s and 6,800 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Silicon Power guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Hardware Versions:
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Jan 16th, 2022
Part Number: SP02KGBP44XS7005
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: YMTC
Name: Xtacking 2.0 (CDT1B)
Rebranded: SYMN09TC1B1RC6C
Type: TLC
Technology: 128-layer
Speed: 1600 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.1
Topology: Charge Trap
Die Size: 60 mm²
(8.5 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 141 per NAND String
90.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 620 µs
Block Erase Time (tBERS): 9.0 ms
Die Read Speed: 1280 MB/s
Die Write Speed: 70 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2304 Pages
Plane Size: 1980 Blocks

DRAM Cache

Type: DDR4-3200 CL22
Name: Micron MT40A512M16TB-062E:R (D8BPK)
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 7,300 MB/s
Sequential Write: 6,800 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 1400 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

NAND Die:

Read Time (tR): Maximum is 50 µs, typical is lower
Typical Program Time (tPROG): 620 µs
Maximum Program Time (tPROG): Maximum is 910 µs
Block Erase Time (tBERS): Maximum is 20 ms, typical is lower
Array Eficiency of over 92%
YMTC 128L Xtacking 2.0 cell architecture consists of two decks connected through deck-interface buffer layer which is the same process with KIOXIA 112L BiCS 3D NAND structure. Cell size, CSL pitch, and 9-hole VC layouts keep the same design and dimension (horizontal/vertical WL and BL pitches) with previous 64L Xtacking 1.0 cell. Total number of gates is 141 (141T) including selectors and dummy WLs for the TLC operation.
This layout has a 1x 4 Plane layout, each one lineup side by side

Jun 13th, 2024 13:51 EDT change timezone

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