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Teamgroup GE Pro 2 TB

2 TB
Capacity
IG5666
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
NAND Die
NAND Die
The Teamgroup GE Pro is a solid-state drive in the M.2 2280 form factor, launched on January 25th, 2024. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Teamgroup GE Pro interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the IG5666 (TacomaPC) from InnoGrit, a DRAM cache chip is available. Teamgroup has installed 232-layer TLC NAND flash on the GE Pro, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The GE Pro is rated for sequential read speeds of up to 14,000 MB/s and 11,800 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Teamgroup guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: Jan 25th, 2024
Part Number: TM8FFS002T0C128
Market: Consumer

Physical

Form Factor: M.2 2280
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown

Controller

Manufacturer: InnoGrit
Name: IG5666 (TacomaPC)
Architecture: ARM Cortex-R5
Frequency: 850 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: Unknown
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
2500 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: DDR4
Capacity: Unknown

Performance

Sequential Read: 14,000 MB/s
Sequential Write: 11,800 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 1400 TBW
Warranty: 5 Years
MTBF: 1.7 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

Drive:

NAND Flash model could be different

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Jun 1st, 2024 03:25 EDT change timezone

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