Report an Error

Transcend 240s 1 TB

1 TB
Capacity
SM2267
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

PCB Front
PCB Front
PCB Back
PCB Back
DRAM
DRAM
Flash
Flash
SSD Controller
Controller
The Transcend 240s is a solid-state drive in the M.2 2280 form factor, launched in 2021. It is available in capacities ranging from 500 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Transcend 240s interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the SM2267 from Silicon Motion, a DRAM cache chip is available. Transcend has installed 96-layer TLC NAND flash on the 240s, the flash chips are made by Micron. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 190 GB. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 240s is rated for sequential read speeds of up to 3,800 MB/s and 3,200 MB/s write; random IO reaches 370K IOPS for read and 560K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Transcend guarantees an endurance rating of 1700 TBW, a good value.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 500 GB 1 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2021
Part Number: TS1TMTE240S
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Silicon Motion
Name: SM2267
Architecture: ARM 32-bit Cortex-R5
Core Count: Dual-Core
Foundry: TSMC
Process: 28 nm
Flash Channels: 4
Chip Enables: 8
Controller Features: HMB

NAND Flash

Manufacturer: Micron
Name: B27B FortisFlash
Rebranded: MT29F4T08EULCEM4-R:C
Type: TLC
Technology: 96-layer
Speed: 533 MT/s .. 1200 MT/s
Capacity: 2 chips @ 4 Tbit
ONFI: 4.1
Topology: Floating Gate
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 108 per NAND String
88.9% Vertical Efficiency
Read Time (tR): 87 µs
Program Time (tProg): 800 µs
Block Erase Time (tBERS): 15 ms
Die Write Speed: 84 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 3456 Pages
Plane Size: 338 Blocks

DRAM Cache

Type: DDR4-2666
Name: Samsung K4A8G165WB-BCTD
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 3,800 MB/s
Sequential Write: 3,200 MB/s
Random Read: 370,000 IOPS
Random Write: 560,000 IOPS
Endurance: 1700 TBW
Warranty: 5 Years
MTBF: 5.5 Million Hours
Drive Writes Per Day (DWPD): 0.9
SLC Write Cache: approx. 190 GB
(dynamic only)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

NAND Die:

tPROG - 800 µs (withouh Vpp)
tPROG w/ ~ 25% Overhead: ~ 914 µs (Avg 70 MB/s per each die)

Jun 1st, 2024 07:41 EDT change timezone

New Forum Posts

Popular Reviews

Controversial News Posts