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Western Digital Gold DC SN600 1.9 TB

1.9 TB
Capacity
WD 20-82-10051-A0
Controller
TLC
Flash
PCIe 3.0 x4
Interface
U.2
Form Factor
NAND Die
NAND Die
The Western Digital Gold DC SN600 is a solid-state drive in the U.2 form factor, launched on March 4th, 2020. It is available in capacities ranging from 960 GB to 7.5 TB. This page reports specifications for the 1.9 TB variant. With the rest of the system, the Western Digital Gold DC SN600 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-10051-A0 (DD04A0 FMB1) from WD, a DRAM cache chip is available. Western Digital has installed 96-layer TLC NAND flash on the Gold DC SN600, the flash chips are made by Toshiba. The Gold DC SN600 is rated for sequential read speeds of up to 3,100 MB/s and 2,000 MB/s write; random IOPS reach up to 472K for reads and 63K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 2800 TBW, a good value.

Solid-State-Drive

Capacity: 1.9 TB (1920 GB)
Variants: 960 GB 1.9 TB 3.8 TB 7.5 TB
Overprovisioning: 259.9 GB / 14.5 %
Production: Unknown
Released: Mar 4th, 2020
Part Number: WDS192T1D0D
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 4.6 W (Idle)
Unknown (Avg)
12.0 W (Max)

Controller

Manufacturer: WD
Name: 20-82-10051-A0 (DD04A0 FMB1)
Architecture: ARM 64-bit Cortex-A53
Flash Channels: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: Unknown
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4
Capacity: Unknown

Performance

Sequential Read: 3,100 MB/s
Sequential Write: 2,000 MB/s
Random Read: 472,000 IOPS
Random Write: 63,000 IOPS
Endurance: 2800 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 0.8
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Jun 1st, 2024 04:56 EDT change timezone

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