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Western Digital SN850X (w/ Heatsink) 4 TB

4 TB
Capacity
WD 20-82-10035
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Flash
Flash
PCB Back
PCB Back
SSD Controller
Controller
The Western Digital SN850X (w/ Heatsink) is a solid-state drive in the M.2 2280 form factor, launched on May 9th, 2022. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Western Digital SN850X (w/ Heatsink) interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the Black G2 (20-82-10035-B2) from WD, a DRAM cache chip is available. Western Digital has installed 112-layer TLC NAND flash on the SN850X (w/ Heatsink), the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The SN850X (w/ Heatsink) is rated for sequential read speeds of up to 7,300 MB/s and 6,600 MB/s write; random IO reaches 1200K IOPS for read and 1000K for writes.
At its launch, the SSD was priced at 820 USD. The warranty length is set to five years, which is an excellent warranty period. Western Digital guarantees an endurance rating of 2400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 370.7 GB / 10.0 %
Production: Active
Released: May 9th, 2022
Price at Launch: 820 USD
Part Number: WDS400T2X0E
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: WD
Name: Black G2 (20-82-10035-B2)
Architecture: ARM 32-bit Cortex-R
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS5
Rebranded: 006777 1T00 3203DCELC0LE (Rebranded by SanDisk)
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 4 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Endurance:
(up to)
3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages

DRAM Cache

Type: LPDDR4
Capacity: 2048 MB
(1x 2048 MB)

Performance

Sequential Read: 7,300 MB/s
Sequential Write: 6,600 MB/s
Random Read: 1,200,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 2400 TBW
Warranty: 5 Years
MTBF: 1.8 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Notes

Drive:

This drive uses a hybrid pSLC Cache design.

NAND Die:

Typ. Endurance: 1700 ~ 3000 P.E.C.
Typ. pSLC Endurance: 50.000 ~ 100.000 P.E.C.

May 17th, 2024 13:11 EDT change timezone

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