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Zhitai TiPRO7000 2 TB

2 TB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Zhitai TiPRO7000 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Zhitai TiPRO7000 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Zhitai has installed 128-layer TLC NAND flash on the TiPRO7000, the flash chips are made by YMTC. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The TiPRO7000 is rated for sequential read speeds of up to 7,400 MB/s and 6,700 MB/s write; random IO reaches 850K IOPS for read and 1050K for writes.
At its launch, the SSD was priced at 224 USD. The warranty length is set to five years, which is an excellent warranty period. Zhitai guarantees an endurance rating of 1200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2048 GB)
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 140.7 GB / 7.4 %
Production: Active
Released: 2022
Price at Launch: 224 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: YMTC
Name: Xtacking 2.0 (CDT2A)
Type: TLC
Technology: 128-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Topology: Charge Trap
Die Size: 60 mm²
(8.5 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 141 per NAND String
90.8% Vertical Efficiency
Read Time (tR): 46 µs
Program Time (tProg): 620 µs
Block Erase Time (tBERS): 9.0 ms
Die Read Speed: 1391 MB/s
Die Write Speed: 103 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(60000 in SLC Mode)
Page Size: 16 KB
Plane Size: 2304 Blocks

DRAM Cache

Type: DDR4
Capacity: 2048 MB
(2x 1024 MB)

Performance

Sequential Read: 7,400 MB/s
Sequential Write: 6,700 MB/s
Random Read: 850,000 IOPS
Random Write: 1,050,000 IOPS
Endurance: 1200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.3
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Notes

NAND Die:

Array Eficiency of over 92%
Xtacking 3.0 introduces back side source connect (BSSC) for memory cell wafer, which leads to simpler process and lower cost
This layout has a 2x 2 Plane layout
It achieves 26µs in read latencies in pSLC Mode, and also 180 µs in tPROG in pSLC Mode.
Jun 1st, 2024 03:31 EDT change timezone

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