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Creation of Faster, More Resilient ReRam

Discussion in 'Science & Technology' started by Kreij, Jul 20, 2011.

  1. Kreij

    Kreij Senior Monkey Moderator Staff Member

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    Korean researchers working out of the Samsung Advanced Institute of Technology report in a paper published in Nature Materials, that they've been able to create a non-volatile Resistance RAM (ReRam) chip capable of withstanding a trillion read/write cycles, all with a switching time of just 10ns (about a million times faster than current flash chips), paving the way for a possible upgrade to flash memory cards.

    ReRam chips are non-volatile, meaning they can retain stored information in the absence of power and are currently made using a Ta2O5 (tantalum) film, the new chips developed by the Samsung team uses Ta2O5-x/TaO2-x as filaments to create a bi-layer structure, rather than coating the entire surface with the metallic substance.

    The authors report in the paper that they believe their chip uses less power than other experimental ReRam chips and should be suitable as a potential replacement for current flash memory devices.

    Read more at PhysOrg.com
  2. twilyth Guest

    I had no idea what this was, so here's a little snippet from wikipedia to help out others feeling technologically challenged right about now.

  3. cheesy999

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    so, will this give us faster ram or cheaper SSD's or what?

    i assume the memory card use can be reused for SSD's

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