HellasVagabond
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| System Name | SECONDARY RIG / PRIMARY RIG / THIRD RIG |
|---|---|
| Processor | i920@3.6GHz / i920@4GHz / AMD Phenom II 955 |
| Motherboard | Gigabyte EX58-UD4P / Gigabyte EX58-UD7 / ASRock 890GX3 |
| Cooling | CoolIT Domino ALC / Thermalright Silver Arrow / Thermalright VenomousX |
| Memory | 12GB DDR3 @ 1800MHZ / 6GB DDR3 @ 2250MHZ / 4GB DDR3 @ 1600MHZ |
| Video Card(s) | XFX ATI RADEON 5970 / GAINWARD NVIDIA GTX 580 / 2xGEFORCE GTX295 |
| Storage | 1550GB / 6TB SAS - SSD / 160GB SSD |
| Display(s) | NEC 26WUXi2 / NEC 3090WQXi / SONY 55A2000 (1080P 55inch) |
| Case | COOLER MASTER HAF 932 / COOLER MASTER ATCS 840 / ANTEC DARKFLEET DF85 |
| Audio Device(s) | Soundblaster X-Fi Xtreme Music / SoundBlaster X-Fi Fatal1ty Pro / Realtek Onboard |
| Power Supply | CWT 1200W / Enermax Revolution 85+ 1250W / Ikonik Vulcan 1200W |
| Software | Windows 7 x64 / Windows 7 x64 / Windows 7 x64 |
Samsung announced today that it has developed its first 60 nanometer -class 2 gigabit DDR2 DRAM and will begin mass producing it later this year.
Compared with 80nm 2Gb DDR2, the 60 nanometer (nm)-class with a speed of 800 megabits per second has improved DRAM performance up to 20 percent. Moreover, production efficiency for the new 2Gb DDR2 will be enhanced by about 40 percent using the finer 60nm-class process technology.
Besides its greater efficiencies, the new 2Gb DDR2 device will provide twice as much storage capacity over existing system memory solutions.
The DRAM is suited for applications in servers, workstations and notebook PCs where operating speed is a major concern.
The 2Gb DDR2 device cuts in half the number of components used in a 1Gb-based 8GB (four-rank) module, which consists of 72 1Gb chips. The solution consumes approximately 30% less power than a module of the same capacity using 1Gb chips. The lower power level generates less heat, improving reliability and minimizing cooling requirements.
Samsung can supply the 2Gb DDR2 in four types of modules: 8GB fully-buffered, dual inline memory modules (FBDIMMs); 8GB registered, dual inline memory modules (RDIMMs); 4GB unbuffered, dual inline memory modules (UDIMMs); and 4GB small outline, dual inline memory modules (SODIMMs).
With mass production of the 2Gb DDR2 scheduled to begin by year end, Samsung will have its complete DDR2 product line-up in production at the 60nm?class from 512Mb to 2Gb. Samsung?s 1Gb and 512Mb are already being produced using 60nm?class process technology.
Article
Compared with 80nm 2Gb DDR2, the 60 nanometer (nm)-class with a speed of 800 megabits per second has improved DRAM performance up to 20 percent. Moreover, production efficiency for the new 2Gb DDR2 will be enhanced by about 40 percent using the finer 60nm-class process technology.
Besides its greater efficiencies, the new 2Gb DDR2 device will provide twice as much storage capacity over existing system memory solutions.
The DRAM is suited for applications in servers, workstations and notebook PCs where operating speed is a major concern.
The 2Gb DDR2 device cuts in half the number of components used in a 1Gb-based 8GB (four-rank) module, which consists of 72 1Gb chips. The solution consumes approximately 30% less power than a module of the same capacity using 1Gb chips. The lower power level generates less heat, improving reliability and minimizing cooling requirements.
Samsung can supply the 2Gb DDR2 in four types of modules: 8GB fully-buffered, dual inline memory modules (FBDIMMs); 8GB registered, dual inline memory modules (RDIMMs); 4GB unbuffered, dual inline memory modules (UDIMMs); and 4GB small outline, dual inline memory modules (SODIMMs).
With mass production of the 2Gb DDR2 scheduled to begin by year end, Samsung will have its complete DDR2 product line-up in production at the 60nm?class from 512Mb to 2Gb. Samsung?s 1Gb and 512Mb are already being produced using 60nm?class process technology.
Article