Wednesday, April 2nd 2008
Micron Starts Sampling 4GB DDR3 Notebook Modules
Micron Technology today announced that it is sampling 4GB DDR3 modules, designed using 2Gb components, to provide the industry's highest density DDR3 modules for notebook computers. High-density memory modules are becoming increasingly important for notebook computers as graphic-intensive operating systems and other content heavy applications continue to make their way onto the market. The fast speeds, high-density and low-power of Micron's portfolio of DDR3 modules - ranging in density from 512MBs to now 4 GBs - allow these systems and applications to perform more effectively and utilize power more efficiently.
"With our new 4GB DDR3 modules, we are allowing users to easily take advantage of the performance benefits that increased memory provides," said Brian Shirley, Vice President of Micron's Memory Group.
The company also announced it has received Intel's validation on 512MB, 1GB and 2GB DDR3 notebook modules for the upcoming Intel Centrino 2 processor technology mobile platform. Micron's 4GB DDR3 notebook modules are currently going through the validation process at Intel. To see a complete list of products validated on Intel's chipset platform and to learn more about these products go to www.micron.com/ddr3sodimm.
"Micron is developing DDR3 memory products that will support Intel's high-performance desktop, workstation, server, and mobile platforms in 2008," said Ali Sarabi, Director of Industry Initiatives and Pathfinding at Intel Corporation. "The DDR3 architecture and products are key to Intel's leadership product roadmap."
Micron's DDR3 modules support data rates of up to 1333 megabits per second, enabling better system and graphics performance, which provides for a more interactive user experience. DDR3 supply voltage operates at 1.5-volts in comparison to DDR2's 1.8-volts, reducing power consumption by up to 30 percent.
"With increased memory adoption on the rise in notebook computers, reduced power consumption is becoming even more important to enable longer battery life and keep the system running," continued Shirley.
Availability
Micron's 512MB, 1GB and 2GB modules are in mass production now, with its 2 Gb-based DDR3 4GB modules expected to be in mass production in Q2 2008.
"With our new 4GB DDR3 modules, we are allowing users to easily take advantage of the performance benefits that increased memory provides," said Brian Shirley, Vice President of Micron's Memory Group.
The company also announced it has received Intel's validation on 512MB, 1GB and 2GB DDR3 notebook modules for the upcoming Intel Centrino 2 processor technology mobile platform. Micron's 4GB DDR3 notebook modules are currently going through the validation process at Intel. To see a complete list of products validated on Intel's chipset platform and to learn more about these products go to www.micron.com/ddr3sodimm.
"Micron is developing DDR3 memory products that will support Intel's high-performance desktop, workstation, server, and mobile platforms in 2008," said Ali Sarabi, Director of Industry Initiatives and Pathfinding at Intel Corporation. "The DDR3 architecture and products are key to Intel's leadership product roadmap."
Micron's DDR3 modules support data rates of up to 1333 megabits per second, enabling better system and graphics performance, which provides for a more interactive user experience. DDR3 supply voltage operates at 1.5-volts in comparison to DDR2's 1.8-volts, reducing power consumption by up to 30 percent.
"With increased memory adoption on the rise in notebook computers, reduced power consumption is becoming even more important to enable longer battery life and keep the system running," continued Shirley.
Availability
Micron's 512MB, 1GB and 2GB modules are in mass production now, with its 2 Gb-based DDR3 4GB modules expected to be in mass production in Q2 2008.