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Being the leading-edge semiconductor manufacturing company, TSMC actively works on increasing the efficiency of its upcoming nodes, even when they are finalized and ready for high-volume manufacturing. According to a TSMC employee identified as Dr. Kim on X, recent test runs of the 2 nm N2 nodes show a 6% improvement in production yields compared to baseline expectations. This advancement could translate into substantial cost savings for the company's customers when mass production begins in late 2025. However, specific details about whether the gains were achieved in SRAM or logic test chips remain undisclosed. The timing is particularly noteworthy as TSMC prepares to launch its shuttle test wafer services for 2 nm technology in January. The N2 process represents a giant leap for TSMC, marking its first gate-all-around (GAA) nanosheet transistors implementation, the first step to derive from the classical FinFET design.
According to TSMC's projections, chips manufactured using the N2 process will consume 25-30% less power while maintaining the same transistor count and frequency as its N3E node. Additionally, the technology is expected to deliver 10-15% performance improvements and achieve a 15% increase in transistor density. A key innovation in the N2 process is the enhanced design of its GAA nanosheet transistors, which offers improved electrostatic control and reduced gate leakage compared to 3 nm FinFET transistors, given that the gate can be controlled from all sides. This advancement enables smaller high-density transistors to maintain reliable performance through better threshold voltage tuning capabilities. With approximately seven to eight months until full-scale volume production begins, the company has a substantial window to optimize the manufacturing process further and potentially achieve additional yield improvements, although that is less likely.
View at TechPowerUp Main Site | Source
According to TSMC's projections, chips manufactured using the N2 process will consume 25-30% less power while maintaining the same transistor count and frequency as its N3E node. Additionally, the technology is expected to deliver 10-15% performance improvements and achieve a 15% increase in transistor density. A key innovation in the N2 process is the enhanced design of its GAA nanosheet transistors, which offers improved electrostatic control and reduced gate leakage compared to 3 nm FinFET transistors, given that the gate can be controlled from all sides. This advancement enables smaller high-density transistors to maintain reliable performance through better threshold voltage tuning capabilities. With approximately seven to eight months until full-scale volume production begins, the company has a substantial window to optimize the manufacturing process further and potentially achieve additional yield improvements, although that is less likely.
View at TechPowerUp Main Site | Source
