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Researchers at Fudan University have made a significant advancement in integrated circuit technology. The team led by Zhou Peng and Liu Chunsen has developed "PoX," a picosecond flash memory device that operates at unprecedented speeds. The team predicted a phenomenon called "super-injection" by creating a quasi-2D Poisson model, which surpasses existing theoretical limits on memory speed. Their device achieves read/write speeds of 400 picoseconds (less than one nanosecond), equaling approximately 2.5 billion operations per second and making it the world's fastest semiconductor charge memory technology. "This is like the device can work one billion times in the blink of an eye, while a U disk (a hard drive in USB form) can only work 1,000 times. The previous world record for similar technology was two million," said Zhou Peng, a researcher from Fudan University's State Key Laboratory of Integrated Chips and Systems and a leading scientist on the research team.
Traditional flash memory requires electrons to "warm up" and accelerate along a channel before being captured for storage, a process limited by the long acceleration distance and electric field constraints. The new approach includes Dirac energy band structure, ballistic transport properties of two-dimensional materials, and modulation for the Gaussian length of the 2D channel. This allows electrons to reach very high speeds immediately without any 'run-up' period. Once fully developed, it can completely revolutionize the computer architecture by making memory and storage components unnecessary, obviating the need for hierarchical storage and allowing for large AI models to be deployed locally. Within 3 -5 years, the researchers plan to scale integration to tens of megabits, after which the technology will be made available for licensing to industry. The research was published as 'Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection' in the journal Nature 641, 90-97 (2025).
View at TechPowerUp Main Site | Source
Traditional flash memory requires electrons to "warm up" and accelerate along a channel before being captured for storage, a process limited by the long acceleration distance and electric field constraints. The new approach includes Dirac energy band structure, ballistic transport properties of two-dimensional materials, and modulation for the Gaussian length of the 2D channel. This allows electrons to reach very high speeds immediately without any 'run-up' period. Once fully developed, it can completely revolutionize the computer architecture by making memory and storage components unnecessary, obviating the need for hierarchical storage and allowing for large AI models to be deployed locally. Within 3 -5 years, the researchers plan to scale integration to tens of megabits, after which the technology will be made available for licensing to industry. The research was published as 'Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection' in the journal Nature 641, 90-97 (2025).
View at TechPowerUp Main Site | Source
