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| Processor | Intel Core 2 Quad Q6600 G0 VID: 1.2125 |
|---|---|
| Motherboard | GIGABYTE GA-P35-DS3P rev.2.0 |
| Cooling | Thermalright Ultra-120 eXtreme + Noctua NF-S12 Fan |
| Memory | 4x1 GB PQI DDR2 PC2-6400 |
| Video Card(s) | Colorful iGame Radeon HD 4890 1 GB GDDR5 |
| Storage | 2x 500 GB Seagate Barracuda 7200.11 32 MB RAID0 |
| Display(s) | BenQ G2400W 24-inch WideScreen LCD |
| Case | Cooler Master COSMOS RC-1000 (sold), Cooler Master HAF-932 (delivered) |
| Audio Device(s) | Creative X-Fi XtremeMusic + Logitech Z-5500 Digital THX |
| Power Supply | Chieftec CFT-1000G-DF 1kW |
| Software | Laptop: Lenovo 3000 N200 C2DT2310/3GB/120GB/GF7300/15.4"/Razer |
Intel Corporation today announced it has become the first company to reach an important milestone in the development of 45 nanometer (nm) logic technology. Intel has produced what are believed to be the first fully functional SRAM (Static Random Access Memory) chips using 45nm process technology, its next- generation, high-volume semiconductor manufacturing process. Intel's 45nm process technology will allow chips with more than five times less leakage power than those made today. This will improve battery life for mobile devices and increase opportunities for building smaller, more powerful platforms. With the introduction of 45nm chips, Intel has also announced two high-volume fabs under construction in Arizona and Israel to manufacture chips using the 45nm process technology.
View at TechPowerUp Main Site
View at TechPowerUp Main Site
