Tokyo Electron Develops Memory Channel Hole Etching for 400+ Layer 3D NAND Flash

[T0@st]

Tokyo Electron announced that its development team at Tokyo Electron Miyagi—the development and manufacturing site for its plasma etch systems—has developed an innovative etch technology capable of producing memory channel holes in advanced 3D NAND devices with a stack of over 400 layers. The new process developed by the team has brought dielectric etch application to the cryogenic temperature range for the first time, producing a system with exceptionally high etch rates.

The innovative technology not only enables a 10-µm-deep etch with a high aspect ratio in just 33 minutes, but also can reduce the global warming potential by 84% compared with previous technologies. The geometry of the etched structure is quite well-defined as shown in the figure 1. Potential innovations enabled by this technology will spur creation of 3D NAND flash memory with even larger capacity.




Figure 1 shows a cross section SEM image of memory channel hole pattern after etching, and FIB cut image at the hole bottom. Figure 2 is an example of TEL's 3D NAND Flash.

TEL's team that developed this technology will present a report on its research results at the 2023 Symposium on VLSI Technology and Circuits, one of the most prestigious international conferences on semiconductor research, to be held from June 11 to June 16 in Kyoto. Please look forward to our technology presentation that contributes to semiconductor technology innovation and global environment protection.

Continuing to pursue the motto of Best Products and Best Technical Service, TEL will contribute to technological innovation in semiconductors. As this year marks the 60th anniversary of our founding—which we consider to be a new transformative point for us—we will take on new challenges and continue to evolve, contributing to the development of a dream-inspiring society.

View at TechPowerUp Main Site | Source

 

[Denver]

"but also can reduce the global warming potential by 84% compared with previous technologies"

It would be fun to see someone trying to come up with arguments to support such a claim. :')

 

[TumbleGeorge]

"but also can reduce the global warming potential by 84% compared with previous technologies"

It would be fun to see someone trying to come up with arguments to support such a claim. :')

It could be the heat transfer in the chip. As the density and number of layers progress, heat transfer outside the dies also becomes more difficult. So this is a good solution.

 

[kondamin]

"but also can reduce the global warming potential by 84% compared with previous technologies"

It would be fun to see someone trying to come up with arguments to support such a claim. :')

probably a translation error, like requiring only 16% of the energy needed of an other production method

 

[persondb]

It could be the heat transfer in the chip. As the density and number of layers progress, heat transfer outside the dies also becomes more difficult. So this is a good solution.

That would just mean you are cooling it better, not using less energy.

 

[ArdWar]

"but also can reduce the global warming potential by 84% compared with previous technologies"

It would be fun to see someone trying to come up with arguments to support such a claim. :')

GWP is an index of how potent a substance is compared to CO2 at causing global warming.

That claim about process reduction could mean anything tbf. Probably something like using less or different etchant. Semiconductor plasma etching uses a *lot* of fluorine and chlorine compound (fluoroform, etc)

 

[Minus Infinity]

That would just mean you are cooling it better, not using less energy.

No if the design allows for much more efficient cooling due to the channels, you can significantly reduce your cooling demands/cost/energy use.

 

[stewartprinciple]

GWP is an index of how potent a substance is compared to CO2 at causing global warming.

That claim about process reduction could mean anything tbf. Probably something like using less or different etchant. Semiconductor plasma etching uses a *lot* of fluorine and chlorine compound (fluoroform, etc)

You are absolutely right. The etch process plasma etching uses a lot of carbon containing gases. In the new process the use of carbon containing gases reduced a lot as TEL describes.

 

[TumbleGeorge]

What is the problem with processing gases if they are not released into the atmosphere?